Hot electron luminescence in In0.53Ga0.47As transistor channel
نویسندگان
چکیده
Measurements of light emission are reported in the 1.1–2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission, there is the ability to identify the intraconduction band transitions as the main light emission mechanism. Hot-electron effective temperatures up to 2200 K have been determined from high energy exponential tails of the electroluminescence spectra. © 1995 American Institute of Physics.
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تاریخ انتشار 1996